Vertical field effect transistor

Details Vertical field effect transistor Vertical field effect transistor

1978-05-22

1978-12-12

Wojciechowicz, Edward J.

357 23, 357 46, H01L 2980

Patent

active

041298799

ABSTRACT:
An interdigitated field effect transistor for high power, high frequency applications has a vertical configuration with current flow essentially normal to the surface, as compared to planar devices in which current flow is parallel to the surface. Each channel region is of the same conductivity type as the source and drain regions and is in a mesa structure surrounded by the gate metallization such that the gate metal forms an electronically blocking contact to the channel semiconductor. The device geometry has a natural strip line configuration.

REFERENCES:
patent: 3761785 (1973-09-01), Pruniaux
patent: 3851379 (1974-12-01), Gutknecht et al.

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