Field-effect transistor

Details Field-effect transistor Field-effect transistor

1986-10-01

1990-05-01

James, Andrew J.

357 15, 357 41, H01L 2980

Patent

active

049223100

ABSTRACT:
The invention relates to a field-effect transistor having a drain region, a source region and a gate electrode for influencing a channel area. The invention consists of arranging the source region and the gate electrode one above the other in a projection onto the channel plane such that the effective length is so small that an increase of the electron velocity in the channel is achieved.

REFERENCES:
patent: 4191963 (1980-03-01), Schmidt et al.
patent: 4471366 (1984-09-01), Delagebeaudeuf et al.
patent: 4624004 (1986-11-01), Calviello
patent: 4740822 (1988-04-01), Itoh
IEEE Transactions on Electron Devices, vol. ED-24, Jun. 1977, pp. 757-761.
IBM Technical Disclosure Bulletin, vol. 15, #4, Sep. 1972, pp. 1342-1343, by Gaind.
Beneking et al, "Buried-Channel GaAs MESFET's on MBE Material: Scattering Parameters and Intermodulation Signal Distortion", IEEE Transactions on Electron Devices, vol. ED-29, No. 5, May 1982, pp. 811-813.
Mimura et al, "A New Field-Effect Transistor with Selectively Doped GaAs
-Al.sub.x Ga.sub.1-x As Heterojunctions", Japanese Journal of Applied Physics, vol. 19, No. 5, 1980, pp. 225-227.
Yamasaki et al, "GaAs LSI-Directed MESFET's with Self-Aligned Implantation for n.sup.+ -Layer Technology (SAINT)", IEEE Transactions on Electron Devices, vol. ED-29, No. 11, 1982, pp. 1772-1777.
J. Graffeuil et al, "Semiempirical Expressions for Direct Transconductance and Equivalent Saturated Velocity in Short-Gate-Length MESFETs", IEE Proc., vol. 129, Pt. I, No. 5, Oct. 1982, pp. 185-188.

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