Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Charge transfer device
Patent
1992-02-27
1993-08-24
James, Andrew J.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Charge transfer device
257240, 257243, 257246, H01L 2978, H01L 2702
Patent
active
052391922
ABSTRACT:
A horizontal charge transfer register has an array of charge transfer sections for transferring signal charges in a charge transfer direction, the charge transfer sections including a final charge transfer section. A floating diffusion region is connected to the final charge transfer section through a horizontal output gate section. A pair of potential barrier regions or a potential well region extends from the final charge transfer section to the horizontal output gate section, for orienting an electric field in the charge transfer direction in the horizontal output gate section. The potential barrier regions are spaced from each other by a distance which is progressively smaller from the final charge transfer section toward the horizontal output gate section. The potential barrier regions define a charge transfer path therebetween which is substantially the same as or close to the width of the floating diffusion region. The potential well region extends from the final charge transfer section centrally through the horizontal output gate section to the floating diffusion region.
James Andrew J.
Ngo Ngan Van
Sony Corporation
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