Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With reflector – opaque mask – or optical element integral...
Patent
1992-11-12
1993-08-24
Crane, Sara W.
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With reflector, opaque mask, or optical element integral...
257 94, 372 47, H01L 3300
Patent
active
052391906
ABSTRACT:
A light emitting device comprises a substrate, a reflection mirror formed on the substrate, the reflection mirror comprising alternate lamination of amorphous or polycrystalline layers, having refractive indices different from each other; a crystal formation plane formed on the reflection mirror, the crystal formation plane comprising a nucleus non-formation plane having a low nucleus formation density and a nucleus formation plane disposed adjacent to the nucleus non-formation plane and having a higher nucleus formation density than that of said nucleus non-formation plane and a sufficiently small area to allow growth of a crystal thereon by only a single nucleus, and a light emitting area of single crystal formed on the crystal formation plane.
REFERENCES:
patent: 4317086 (1982-02-01), Scifres et al.
patent: 4510607 (1985-04-01), Garcia et al.
patent: 4901327 (1990-02-01), Bradley
patent: 5010033 (1991-04-01), Tokunaga et al.
Siegman, A. Lasers, University Science Books, 1986, pp. 402-403.
Canon Kabushiki Kaisha
Crane Sara W.
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