Method of producing a semiconductor memory device having trench

Details Method of producing a semiconductor memory device having trench Method of producing a semiconductor memory device having trench

1988-06-08

1990-05-01

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 38, 437 47, 437 60, 437203, 437919, 437 61, 357 236, H01L 2710, H01L 2978

Patent

active

049218158

ABSTRACT:
A D-RAM is disclosed which isolates the capacitors of memory cells and also isolates the adjacent memory cells by utilizing trenches formed on a semiconductor substrate. The device is particularly intended to the area of each memory cell and prevent the occurrence of a leakage current between the adjacent memory cells. Two side walls of the trench are used as the capacitors of two different memory cells, respectively, and these capacitors are isolated from each other by a thick oxide film that is formed on the bottom of each trench.

REFERENCES:
patent: 4353086 (1982-10-01), Jaccodine
Furuyama et al; "A Vertical Capacitor Cell For ULSI Drams", 1984 Symposium on VLSI Techn, Dig. of Tech. Papers #10-12 Sep. 1984-San Diego, Ca.
Boonstra et al., IEEE J. of Solid State Circuits, vol. SC-8, No. 5, 1973, pp. 305-310.

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