Method of producing an MMIC

Details Method of producing an MMIC Method of producing an MMIC

1988-12-22

1990-05-01

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 51, 437159, 437175, 437203, 357 51, 357 22, H01L 2100, H01L 2102, H01L 2980, H01L 2708

Patent

active

049218140

ABSTRACT:
A method of producing MMIC's and the MMIC thus produced having a reproducible quiescent operating point from lot to lot under the same bias conditions. The source to drain saturation current of the amplifier MESFET in the MMIC can vary from lot to lot if the depth of the gate recess varies from lot to lot. As a result, the quiescent operating point of the amplifier under the same bias conditions can vary from lot to lot. A compensated gate bias source, preferably in the form of an extra MESFET on the MMIC, is fabricated at the same time as the amplifier MESFET and thus has a gate recess having a depth which precisely matches that of the amplifier MESFET. The extra MESFET is connected as a compensated gate bias source and has a resistance which is a function of the depth of the gate recess and thus compensates the quiescent operating point of the amplifier MESFET.

REFERENCES:
Ch'en, D., MMIC's the Next Generation of Microwave Components, Microwave J.(U.S.A.), vol. 23, No. 5, May 1980, pp. 67-78.
Pengelly, Microwave Field-Effect Transistors-Theory, Design, and Application, 1982, pp. 381-399.

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