Fabrication method for laminated films comprising Al-Si-Co alloy

Fishing – trapping – and vermin destroying

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437199, 437200, 437189, 437192, 437194, 148DIG147, H01L 2128

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052388743

ABSTRACT:
As a wiring for semiconductor devices, the wiring consisting of an Al-Si-Cu alloy film is excellent in the electromigration resistance but is inferior in the stressmigration resistance. In order to compensate this aspect a laminated film consisting of an Al-Si-Cu alloy film and a refractory metal silicide film began to be used as the wiring, but a wiring thus obtained has a weakness in that its electromigration resistance deteriorates. However, it is possible to suppress the deterioration in the electromigration resistance while maintaining the stressmigration resistance by adding Cu to the refractory metal silicide film. In particular, when the refractory metal silicide film is a tungsten silicide film, the concentration of Cu is preferable that it is in the range of 0.1 to 1.0 wt. %.

REFERENCES:
patent: 4443930 (1984-04-01), Hwang et al.
patent: 4495221 (1985-01-01), Broadbent
patent: 4742014 (1988-05-01), Hooper et al.
T. Fjuii et al., "Comparison of Electromigration Phenomenon Between Aluminum Inter-Connection of Various Multilayered Materials", VMIC Conference, Jun. 12-13, 1989, pp. 477-483.

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