Method of manufacturing a semiconductor device

Details Method of manufacturing a semiconductor device Method of manufacturing a semiconductor device

1991-11-25

1993-08-24

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437913, 437946, 134 3, 134 31, 156646, 148DIG17, 148DIG53, H01L 21306

Patent

active

052388719

ABSTRACT:
A method of manufacturing a semiconductor device including a MOS-type field effect transistor includes cleansing a surface of a substrate; forming, next to the cleansing step, a gate oxide film on the cleansed surface of the substrate; wherein the cleansing step includes dry-etching the surface of the substrate in an atmosphere in which hydrogen fluoride and a substance containing at least a chlorine atom coexist in gaseous state and removing an oxide film and metal impurities on the surface of the substrate. Preferably, the dry-etching is performed under heat and decompression.

REFERENCES:
patent: 3426422 (1969-02-01), Deal
patent: 4264374 (1981-04-01), Beyer et al.
patent: 4923828 (1990-05-01), Gluck et al.
Burggraaf, P., "Vapor-phase cleaning at reduced pressure", Semiconductor International, p. 36, (Dec. 1989).
Sato et al., Japanese Journal of Applied Physics Extended Abstracts 22th. Conf. Solid State Devices and Materials (1990), Tokyo, Japan, pp. 1103-1106.
Frystak et al., Extended Abstracts Spring Meeting 88-1 (1988) May 15-20, Princeton, N.Y., USA, pp. 161-162.

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