Fishing – trapping – and vermin destroying
Patent
1992-07-27
1993-08-24
Chaudhuri, Olik
Fishing, trapping, and vermin destroying
437976, 437132, H01L 2120, H01L 21306, H01L 21326
Patent
active
052388697
ABSTRACT:
Heteroepitaxy of lattice-mismatched semiconductor materials such as GaAs (110) on silicon (102) is accomplished by formation of a defect annihilating grid (104) on the silicon (102) prior to the epitaxy of the GaAs (110).
REFERENCES:
patent: 4561916 (1985-12-01), Akiyama et al.
patent: 4707216 (1987-11-01), Morkoc et al.
Soga et al., "Selective MOCVD of GaAs on Si . . . ," Jpn. J. App. Phys., vol. 26, No. 2, Feb. 1987, pp. 252-255.
Lee et al., "Ion . . . Molecular-Beam Epitaxy Grown GaAs-On-Si," J. Vac. Sci. Technol. B 5(3), May/Jun. 1987, pp. 827-830.
Koch et al., "The Growth of GaAs o n Si by Molecular Beam Epitaxy," Mat. Sec. Soc. Symp. Proc., vol. 67, 1986, pp. 37-43.
Chand et al., ". . . Molecular Beam Epitaxially Grown GaAs on Si (100) by Rapid Thermal Annealing," Appl. Phys. Lett., 49(13), 29 Sep. 1986, pp. 815-817.
Choi et al., "Monolithic Integration of Si and GaAs Devices," Mat. Res. Soc. Symp. Proc., vol. 67, 1986, pp. 165-171.
Lee et al., ". . . Selective-Area Molecular Beam Epitaxy of GaAs Film on Si Substrate," Appl. Phys. Lett., 52(3), 18 Jan. 1988, pp. 215-217.
Tsaur et al., "Molecular Beam Epitaxy of GaAs and AlGaAs on Si," Appl. Phys. Lett., 45(5), 1 Sep. 1984, pp. 535-536.
Akiyama et al., "Growth of High Quality GaAs Layers on Si Substrates by MOCVD," J. Crys. Growth, 77 (1986), pp. 490-497.
Mizuguchi et al., "MOCVD GaAs Growth on Ge (100) and Si (100) Substrates," J. Crys. Growth, 77 (1986), pp. 509-514.
Fischer et al., "Monolithic Integration of GaAs/AlGaAs . . . Silicon Circuits," Appl. Phys. Lett. 47(9), 1 Nov. 1985, pp. 983-985.
Turner et al., "High Speed Photoconductive Detectors Fabricated in Heteroepitaxial GaAs Layers," Mat. Res. Soc. Symp. Proc., vol. 67, 1986, pp. 181-188.
Matyi Richard J.
Shichijo Hisashi
Chaudhuri Olik
Donaldson Richard L.
Kesterson James C.
Paladugu Ramamohan R.
Stoltz Richard A.
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