Method of manufacturing semiconductor device

Coating processes – Electrical product produced – Condenser or capacitor

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156643, 156653, 156657, 427 93, 427259, H01L 21283

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045214484

ABSTRACT:
A method of manufacturing a semiconductor device comprises the steps of: forming a thin film on a semiconductor body on which a protruding pattern is formed with the film covering both the sides and the top of the protruding pattern; performing a selective anisotropic etching on the thin film for a distance corresponding to the thin film thickness, thereby removing a portion of the thin film including that portion covering the top of the protruding pattern and leaving a portion of the thin film covering the sides of the protruding pattern, thus forming a thin film pattern surrounding at least a portion of the protruding pattern; etching at least a top part of the protruding pattern while leaving the thin film pattern to extend upwardly from the surface of the semiconductor body; forming a conductive material film covering the semiconductor body including the thin film pattern; and dividing the conductive material film into portions by removing the thin film pattern.

REFERENCES:
patent: 4354896 (1982-10-01), Hunter
patent: 4359816 (1982-11-01), Abbas
Shinji Okazaki et al., "Edge-Defined Patterning of Hyperfine Refractory Metal Silicide MOS Structures", IEEE Transactions on Electron Devices, vol. ED-28, No. 11, 11/81, pp. 1364-1368.
Hideo Sunami et al., "Selective Oxide Coating of Silicon Gate (SELOCS)", Japanese Journal of Applied Physics, vol. 18, (1979), Supplement 18-1, pp. 255-260.

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