Semiconductor integrated circuit with an internal voltage genera

Electricity: measuring and testing – Fault detecting in electric circuits and of electric components – Of individual circuit component or element

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324763, G01R 3126

Patent

active

059990090

ABSTRACT:
A semiconductor integrated circuit includes a charge pump for issuing an internal power supply voltage higher than an external power supply voltage, two level detectors for detecting a magnitude of the internal power supply voltage issued from the charge pump, and a composite ring oscillator including two ring oscillators connected to these level detectors and having different oscillation frequencies, respectively. Depending on the magnitude of the internal power supply voltage issued from the charge pump, the signals generated by the ring oscillators are selectively issued to the charge pump.

REFERENCES:
patent: 5039893 (1991-08-01), Tomiaswa
patent: 5124574 (1992-06-01), Ibaraki
patent: 5208557 (1993-05-01), Kersh, III
patent: 5264808 (1993-11-01), Tanaka
"A 35ns 64Mb DRAM using On-Chip boosted Power Supply", Doug-Jae Lee et al.., 1992 Symposium on VLSI Circuits Digest of Technical Papers, pp. 64-65 (month unavailable.
"Applications of a High-Voltage Pumped Supply for Low-Power DRAM", R.C. Foss et al.., 1992 Symposium on VLSI Circuits Digest of Technical papers, pp. 106-107 (month unavailable).

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