Method of and apparatus for conducting analysis of buried oxides

Electricity: measuring and testing – Fault detecting in electric circuits and of electric components – Of individual circuit component or element

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324 96, 324501, 324753, G01R 31302

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active

059990066

ABSTRACT:
A beam of light is projected through an electrolyte to a SOI substrate to scan the surface of the SOI substrate. When the light passes through a pinhole in a buried oxide layer, the light excites a semiconductor layer beneath the buried oxides. An ammeter measures electric charges derived by this light excitation to indicate the presence of pinholes in the buried oxide.

REFERENCES:
patent: 4125440 (1978-11-01), Markovits
patent: 4431967 (1984-02-01), Nishioka
patent: 4473795 (1984-09-01), Wood
L.P. Allen et al., "Electrochemical Analysis of Simox Buried Oxides", Electrochemical Society Proceedings, vol. 96-3, pp. 18-27.

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