Semiconductor device

Details Semiconductor device Semiconductor device

1997-09-22

1999-12-07

Meier, Stephen D.

Active solid-state devices (e.g., transistors, solid-state diode

Bipolar transistor structure

257378, H01L 27082, H01L 27102, H01L 2970, H01L 3111

Patent

active

059988541

ABSTRACT:
A semiconductor device has a transistor made of a semiconductor which has a source and drain regions, a channel region, a gate insulative film, and a gate electrode. The gate electrode is connected to a part of the channel region. The channel region has the same conductivity type as that of the source and drain regions and has an impurity concentration lower than that of the source and drain regions.

REFERENCES:
patent: 4178190 (1979-12-01), Polinsky
patent: 4314267 (1982-02-01), Bergeron et al.
patent: 4609931 (1986-09-01), Koike
patent: 4612629 (1986-09-01), Harari
patent: 4672416 (1987-06-01), Nakazato et al.
patent: 4830973 (1989-05-01), Mastroianni
patent: 4939563 (1990-07-01), Fang et al.
patent: 4947192 (1990-08-01), Hawkins et al.
patent: 5034782 (1991-07-01), Koizumi et al.
patent: 5040041 (1991-08-01), Yamada et al.
patent: 5075250 (1991-12-01), Hawkins et al.
patent: 5140400 (1992-08-01), Morishita
patent: 5177584 (1993-01-01), Uchida et al.
patent: 5412240 (1995-05-01), Inoue et al.
patent: 5434441 (1995-07-01), Inoue et al.
patent: 5486704 (1996-01-01), Morishita
patent: 5644370 (1997-07-01), Miyawaki et al.
Patent abstracts of Japan, vol. 11, No. 320 (E-550) Oct. 17, 1987 & JP-A-62 110 332 (Citizen Watch).
Patent abstracts of Japan, vol. 6, No. 67 (E-104) Apr. 28, 1982 & JP-A-57 010 267 (Fujitsu).
S. Verdonckt-Vanderbroek et al., "High--Gain Lateral Bipolar Action in a MOSFET Structure," IEEE Transactions of Electron Devices, vol. 38, No. 11, pp. 2487-2496 (Nov. 1991).
Muller et al., Device Electronics for IC's, 2nd Ed., pp. 354-356, 448, 1986 .

Affiliated with

Also associated with

Rating

Semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-826990