Semiconductor device having SiGe spacer under an active layer

Details Semiconductor device having SiGe spacer under an active layer Semiconductor device having SiGe spacer under an active layer

1996-09-19

1999-09-21

Abraham, Fetsum

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

Amorphous semiconductor material

257 65, 257616, H01L 2976

Patent

active

059557451

ABSTRACT:
A semiconductor device which does not allow production of leak current or a drop of the Early voltage and includes a diffused layer having a reduced depth. A silicon layer containing an impurity of a second conduction type is formed on a semiconductor substrate of a first conduction type, and a spacer layer formed from a single crystalline silicon layer containing germanium is provided under the silicon layer.

REFERENCES:
patent: 4825269 (1989-04-01), Plummer et al.
patent: 5285088 (1994-02-01), Sato et al.
patent: 5352912 (1994-10-01), Crabbe et al.
patent: 5461243 (1995-10-01), Ek et al.
patent: 5633179 (1997-05-01), Kamins et al.
patent: 5821577 (1998-10-01), Crabbe et al.
"Very High Speed Bipolar Device"; Minoru Nagata; Baifukan; pp. 58-59; date unknown.
"Optimization of SiGe HBT Technology for High Speed Analog and Mixed-Signal Application"; Harame et al; International Electron Device Meeting, IEDM Tech. Dig., Dec. 5-8, 1993; pp. 71-74.

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