Fishing – trapping – and vermin destroying
Patent
1988-02-11
1992-01-07
Hille, Rolf
Fishing, trapping, and vermin destroying
357 61, 357 50, 357 52, 437126, 437132, 437133, 437234, H01L 2904, H01L 29161, H01L 2704, H01L 2934
Patent
active
050796160
ABSTRACT:
Heteroepitaxial semiconductor structures of, for example, GaAs on InP or Si. The epitaxially grown GaAs is in the form of individual spaced-apart islands having maximum dimensions in the plane of the surface of the substrate of no greater than 10 micrometers. In islands of this size stress in the plane of the epitaxially grown layers due to mismatch of the coefficients of thermal expansion of the substrate and epitaxially grown materials is insignificant.
REFERENCES:
patent: 3963538 (1976-06-01), Broadie et al.
patent: 4065742 (1977-12-01), Kendall et al.
patent: 4632712 (1986-12-01), Fan et al.
patent: 4806996 (1989-02-01), Luryi
"Semiconductor Hetero Junction Topics: Introduction and Overview" Milnes, Solid State Electronics, vol. 29, #2, 1986, pp. 91-121.
"Residual Stress in GaAs Layer Grown on 4.degree.6--OFF (100) Si By MBE", Yao et al., Materials Research Society Symposia Proceedings, vol. 91, 1987, pp. 63-68.
"Epitaxial GaAs on Si: Progress and Potential Applications" Shaw, Materials Research Society Symposia Proceedings, vol. 91, 1987, pp. 15-30.
"Selective Patterning of Single-Crystal GaAs/Ge Structures on Si Substrates by Molecular Beam Epitaxy", Sheldon et al., J. Vac. Sci. Technol., vol. A3, #3, May/Jun. 1985, pp. 883-886.
Jagannath Chirravuri
Yacobi Ben G.
Zemon Stanley
Fahmy Wael
GTE Laboratories Incorporated
Hille Rolf
Lohmann, III Victor F.
LandOfFree
Semiconductor structure does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor structure, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor structure will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-825972