Cleaning and liquid contact with solids – Processes – For metallic – siliceous – or calcareous basework – including...
Patent
1990-05-21
1993-08-24
Chaudhuri, Olik
Cleaning and liquid contact with solids
Processes
For metallic, siliceous, or calcareous basework, including...
134 31, 156639, 156642, 156646, 437946, H01L 21306, B08B 700
Patent
active
052385000
ABSTRACT:
Disclosed are methods and apparatuses for combined etching and cleaning of semiconductor wafers and the like preferably using hydrofluoric acid (HF), hydrochloric acid (HCl) and water solutions which generate equilibrium vapor mixtures of HF vapor, HCl vapor and water vapor as a homogenous processing gas. The processing gases do not employ a carrier gas which will make the vapors nonhomogeneous and reduce etching rates. The vapors are preferably generated from a liquid source which is provided within a contained reaction chamber which holds the wafer. The wafer is preferably oriented with the surface being processed directed downward. The wafer is advantageously positioned above or in close proximity to the liquid source of the processing vapor. The wafer is rotated at a rotational speed in the range of 20-1000 revolutions per minute to provide uniform dispersion of the homogeneous processing gas across the wafer surface and to facilitate circulation and transfer from the liquid source into processing gas and onto the processed surface. The liquid source of the vapor can advantageously be provided in a bath immediately below the processed surface of the wafer or in toroidal basin adjacent to the wafer. The processes provide high speed etching of good uniformity and superior particle count performance.
REFERENCES:
patent: 3773578 (1973-11-01), Glendinning et al.
patent: 4159917 (1979-07-01), Gluck
patent: 4264374 (1981-04-01), Beyer
patent: 4605479 (1986-08-01), Faith, Jr.
patent: 4651440 (1987-03-01), Karl
patent: 4749440 (1988-06-01), Blackwood et al.
patent: 4778559 (1988-10-01), McNeilly
patent: 4788994 (1988-12-01), Shinbara
patent: 4797316 (1989-01-01), Hecq et al.
patent: 4804560 (1989-02-01), Shioya et al.
patent: 4857142 (1989-08-01), Syverson
patent: 4900395 (1990-02-01), Syverson
Moreau et al., "Wafer Cleaner System", IBM Technical Disclosure Bulletin, vol. 19, No. 10, pp. 2905-2906 (Mar. 1972).
Beyer et al., "IBM Tech. Disc. Bull.", Etching of SiO.sub.2 in Gaseous HF/H.sub.2 O, vol. 19, No. 7, Dec. 1976, p. 2513.
van der Heide, P. A. M., et al., "Etching of Thin SiO.sub.2 Layers Using Wet HF Gas", J. Vac. Sci. Technol., A7 (3), pp. 1719-1723, (May/Jun. 1989).
Burggraaf, Pieter, "Vapor-Phase Cleaning at Reduced Pressure", Semiconductor International, p. 36, (Dec. 1989).
Product Brochure, "Preliminary Product Information--EDGE 2000", Advantage, Production Technology Incorporated (1989).
"A Mechanism of Particle Generation and a Method to Suppress Particles in Vapor HF/H.sub.2 O System" in Shigeo Onishi, et al., Extended abstracts of the 22nd (1990 International) Conference on Solid State Devices and Materials, Sendai, 1990, pp. 1127-1139.
IBM Technical Disclosure Bulletin vol. 19, No. 7, p. 2574, Dec. 1976 "Process for Reducing Gold or Copper Wafer Contamination During Oxide Removal" by M. Briska, et al.
Chaudhuri Olik
Ojan Ourmazd S.
Semitool Inc.
LandOfFree
Aqueous hydrofluoric and hydrochloric acid vapor processing of s does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Aqueous hydrofluoric and hydrochloric acid vapor processing of s, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Aqueous hydrofluoric and hydrochloric acid vapor processing of s will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-825914