Method and structure for passivating semiconductor material

Details Method and structure for passivating semiconductor material Method and structure for passivating semiconductor material

1979-05-09

1981-03-03

Edlow, Martin H.

Coating processes

Electrical product produced

Integrated circuit, printed circuit, or circuit board

357 16, 427 86, H01L 4500

Patent

active

042544262

ABSTRACT:
A structure for passivating semiconductor material comprises a substrate of crystalline semiconductor material, a relatively thin film of carbon disposed on a surface of the crystalline material, and a layer of hydrogenated amorphous silicon deposited on the carbon film.

REFERENCES:
patent: 4064521 (1977-12-01), Carlson
patent: 4142195 (1979-02-01), Carlson et al.
patent: 4162505 (1979-07-01), Hanak
patent: 4166919 (1979-09-01), Carlson
Brodsky et al., I.B.M. Tech. Discl. Bull., vol. 20, No. 11B, Apr. 1978, pp. 4962-4963.

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