Process for producing a semiconductor device

Details Process for producing a semiconductor device Process for producing a semiconductor device

1990-05-01

1992-01-07

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437239, 437919, 437 47, 437 60, 148DIG14, 148DIG116, 148DIG163, H01L 2102

Patent

active

050791915

ABSTRACT:
A semiconductor device having a large-capacitance capacitor in which an insulator film is formed underneath a film made of a material having a high dielectric constant, such as tantalum oxide, in such a manner that a portion of the insulator film underneath a defect region which is undesirably thin is thicker than other portions of the insulator film, thereby preventing occurrence of a failure in terms of dielectric strength and deterioration of the lifetime of the capacitor which would otherwise be caused by the existence of the defect region. Also disclosed is a process for producing such semiconductor device. Thus, it is possible to effectively prevent occurrence of problems which would otherwise be caused when a material having a high dielectric constant, such as tantalum oxide, is employed as a dielectric film of a capacitor, so that the reliability of a semiconductor having a large-capacitance capacitor is greatly improved.

REFERENCES:
patent: 4038167 (1977-07-01), Young
patent: 4420497 (1983-12-01), Tickle
patent: 4495219 (1985-01-01), Kato et al.
patent: 4603059 (1986-07-01), Kiyosumi et al.

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