Method for the production of a semiconductor device

Details Method for the production of a semiconductor device Method for the production of a semiconductor device

1989-01-23

1992-01-07

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437228, 437231, 437235, 1566611, H01L 2144

Patent

active

050791885

ABSTRACT:
A method for the production of a semiconductor device in which wiring is formed in three dimensions by the use of interlevel insulators having a flat surface, which method comprises the steps of: applying first insulation material and hardening by heat treatment to form an insulating film made of the first material; etching the insulating film made of the first material in such a manner that only concave portions of an underlying layer are filled with an insulator made of the first material; and forming an insulating film made of a second material thereon, wherein the interlevel insulator is formed by repeating the steps for at least two times so as to have a plurality of the insulators made of the first material which are separated by the insulating films made of the second material.

REFERENCES:
patent: 4545852 (1985-10-01), Barton
patent: 4654113 (1987-03-01), Tuchiya et al.
patent: 4676867 (1987-06-01), Elkins et al.
patent: 4775550 (1988-10-01), Chu et al.
patent: 4826786 (1989-05-01), Merenda et al.

Affiliated with

Also associated with

Rating

Method for the production of a semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for the production of a semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for the production of a semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-822160