Method of forming a high voltage junction in a dielectrically is

Details Method of forming a high voltage junction in a dielectrically is Method of forming a high voltage junction in a dielectrically is

1990-03-26

1992-01-07

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437150, 437 31, 437 62, 437154, 148DIG10, H01L 2104, H01L 2122

Patent

active

050791761

ABSTRACT:
A high voltage junction is formed in a dielectrically isolated island by forming a second conductivity type region in a first conductivity type island wherein the second conductivity type region extends to and between a pair of opposed dielectric isolation wall. This shafts the boundaries to the dielectric walls and removes the low breakdown regions.

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patent: 4299024 (1981-11-01), Piotrowski
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patent: 4553318 (1985-11-01), Chandrasekhar
patent: 4593458 (1986-06-01), Adler
patent: 4729008 (1988-03-01), Beasom
patent: 4740477 (1988-04-01), Einthoven et al.

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