Mask pattern

Details Mask pattern Mask pattern

1998-04-09

1999-12-07

Rosasco, S.

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

G03F 900

Patent

active

059980702

ABSTRACT:
A mask pattern useful for preventing the pattern distortion caused by light transition is disclosed, including a transmissive substrate; a first light-shielding line pattern formed to have an oblong form on the transmissive substrate; second and third light-shielding line patterns of an oblong form spaced apart from a long side of the first light-shielding line pattern and having a width of narrower than a width of edge portions of the first light-shielding line pattern, wherein a space at right to the side of the first light-shielding line pattern is formed between the second and third light-shielding line patterns; and a concave region formed at the long side of the first light-shielding line pattern facing the space between the second and third light-shielding line patterns.

REFERENCES:
patent: 5273850 (1993-12-01), Lee et al.
Chris Spence, et al.; "Automated Determination of CAD Layout Failures Trough Focus"; SPIE vol. 2197; pp. 302-313; Jan. 1994.
Tohru Ogawa et al.; "Challenges to depth-of-focus enhancement with a practical super-resolution technique"; SPIE vol. 2726; pp. 34-35; Feb. 1996.
Young-Beom Kim et al.; "Study on optical proximity correction of Bit Line Pattern in DRAM devices"; SPIE vol. 2726; pp. 670-679.

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