MOS semiconductor integrated circuit in which the production of

Details MOS semiconductor integrated circuit in which the production of MOS semiconductor integrated circuit in which the production of

1985-12-30

1988-04-26

Miller, Stanley D.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307443, 307451, 307568, 307579, 307585, 307296R, H03K 1710, H03K 1716

Patent

active

047407131

ABSTRACT:
Semiconductor integrated circuit of the present invention comprises a signal output terminal, a load circuit connected to the signal output terminal, a transistor circuit which is constituted by at least one first channel MOS transistor and has an output terminal connected to the signal output terminal and an input terminal connected to a signal input terminal, and a first channel enhancement type MOS transistor that is inserted between the transistor circuit's output terminal and the signal output terminal and is made normally in an on state. It is an object of the present invention to provide a highly reliable semiconductor integrated circuit in which no deterioration of characteristics due to hot carriers occurs even when the circuit is constituted using short channel MOS transistors with an effective channel length of about 1 micron or less.

REFERENCES:
patent: 3818245 (1974-06-01), Suzuki et al.
patent: 4069430 (1978-01-01), Masuda
patent: 4317055 (1982-02-01), Yoshida et al.
patent: 4490629 (1984-12-01), Barlow et al.
patent: 4508978 (1985-04-01), Reddy
patent: 4513303 (1985-04-01), Abbas et al.
patent: 4571509 (1986-02-01), Tobita
patent: 4584491 (1986-04-01), Ulmer

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