Method of making a multi-level metallization structure for semic

Details Method of making a multi-level metallization structure for semic Method of making a multi-level metallization structure for semic

1984-11-30

1985-06-04

Ozaki, George T.

Metal working

Method of mechanical manufacture

Electrical device making

29589, 29590, 427 90, H01L 21388

Patent

active

045205540

ABSTRACT:
A semiconductor device having a multi-level metallization system wherein the first level is of aluminum containing up to 3 of percent silicon and the second level is either aluminum or aluminum containing silicon in an amount less than that contained in the first level. The two levels where they contact each other are sintered together with some of the silicon from the first level being diffused into the second level so that the second level has a region adjacent the junction between the two levels which has a higher content of silicon than the remaining portion of the second level. When making the device, the surface of the first level where it is to be joined with the second level is etched to remove some of the aluminum, but not the silicon, which roughens this surface. The second level is applied on this roughened surface and the device is heated to sinter the two levels together and diffuse the silicon into the second level.

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patent: 4433004 (1984-02-01), Yonezawa et al.

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