Solid-state photo sensor device

Details Solid-state photo sensor device Solid-state photo sensor device

1985-06-27

1987-12-22

Davie, James W.

357 24, 357 2, 357 16, 357 58, H01L 2714, H01L 3100

Patent

active

047149507

ABSTRACT:
A solid-state photo sensor device includes a first electrode layer for allowing light to pass therethrough, a first amorphous silicon layer of one conductivity type formed below the first electrode layer, a second amorphous silicon layer of a conductivity type, other than the one conductivity type, disposed below the first amorphous silicon layer, and an output circuit for delivering in the form of an electric current photocarriers excited at least in the second amorphous silicon layer. The first and second amorphous silicon layers each contain inpurity elements whose concentration ranges from about 0 molPPM to 200 molPPM. The output circuit delivers as an electric current also photocarriers excited in the first amorphous silicon layer.

REFERENCES:
patent: 4236829 (1980-12-01), Chikamura et al.
patent: 4271420 (1981-06-01), Chikamura et al.

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