Plasma processing apparatus

Details Plasma processing apparatus Plasma processing apparatus

1997-08-07

1999-12-07

Dang, Thi

Adhesive bonding and miscellaneous chemical manufacture

Differential fluid etching apparatus

With microwave gas energizing means

118723E, 31511121, H05H 100

Patent

active

05997687&

ABSTRACT:
This invention relates to optimization of processing with a pulse plasma. The frequency at the initial period of rise of each pulse is shifted higher than that in the steady state in accordance with the ON timing of a plasma excitation RF power pulse. With this setting, the RF power pulse is matched to a high resonance frequency used when no plasma exists in a processing chamber, or a plasma is weak, thereby enhancing the ignition performance of the pulse plasma. In this invention, a biasing RF power pulse is controlled to adjust the maximum, minimum, or average value of a potential on the processing surface of a substrate to be a predetermined value or less. A means for this control includes a means for controlling the output waveform of the biasing RF power pulse, and a means for controlling the frequency of the biasing RF power pulse. By this control, the damage to the substrate due to collision of ions with the substrate is reduced, and uniform plasma processing is performed.

REFERENCES:
patent: 5698062 (1997-12-01), Sakamoto et al.
patent: 5849136 (1998-12-01), Mintz et al.

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