Method of drawing a pattern on wafer with charged beam

Details Method of drawing a pattern on wafer with charged beam Method of drawing a pattern on wafer with charged beam

1990-05-16

1991-01-29

Lall, Parshotam S.

Boots, shoes, and leggings

364491, G06F 1560

Patent

active

049891561

ABSTRACT:
It is determined whether a pattern of subfield region having a pattern extending from region which is determined by main deflection width P is included in the frame region of maximum deflection width R (=P+Q), and pattern data of the subfield having a pattern extending into an adjacent frame is processed as data which is included in the range of maximum deflection width R.

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patent: 4586141 (1986-04-01), Yasuda et al.
patent: 4628466 (1986-12-01), Tymes
patent: 4692579 (1987-09-01), Saitou et al.
"Electron Beam Lithography System", Precision Machines, 1985, p. 2190.
"Submicrometer Electron-Beam Direct Writing Technology for 1-Mbit DRAM Fabrication", IEEE, 1985, p. 168, T. Matsuda et al.
"Measuring the Performance of the AEBLE-150 Direct-Write E-Beam Lithography Equipment", SPIE, 1985, p. 25, Allen M. Carroll et al.
Patent Abstracts of Japan, vol. 8, No. 250 (E-279)[1687], Nov. 4, 1984; & JP-A-59 125 622 (Fujitsu K.K.), 07-20-84.

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