Fishing – trapping – and vermin destroying
Patent
1986-12-08
1987-12-22
Ozaki, George T.
Fishing, trapping, and vermin destroying
437200, H01L 21365, H01L 41425
Patent
active
047146850
ABSTRACT:
An MOS transistor having relatively low parasitic capacitances is achieved by forming a dielectrically isolated mesa on a monocrystalline substrate. Such mesa includes a polycrystalline silicon region that serves as a gate region and an oxide layer that serves as a gate oxide. Subsequently, such mesa is made to sit on a platform, arising from the silicon substrate and surrounded by a sea of silicon dioxide originally at the level of the bottom of the mesa. The level of this sea is lowered to expose opposed sides of the platform to which is grown separate regions of lateral epitaxial silicon that serve as the source and drain of the transistor.
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General Motors Corporation
Ozaki George T.
Wallace Robert J.
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