Semiconductor capacitor

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357 51, 357 231, H01L 2968, H01L 2702, H01L 2701

Patent

active

049890565

ABSTRACT:
A capacitor having a first electrode, a thin insulator formed on said first electrode and a second electrode formed on said insulator wherein said first and second electrodes are composed of semiconductors that are of complementary conductivity type. Therefore, the current that flows through the capacitor insulator is efficiently suppressed while the thickness of the insulator is decreased, making it possible to realize a capacitor of a small area yet having a large capacitance.

REFERENCES:
patent: 4432006 (1984-02-01), Takei
patent: 4649406 (1987-03-01), Takemae et al.
Hu, Chenming "Thin Oxide Reliability" IEDM 85, Dec. 1985, pp. 368-371.

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