Quantum effect semiconductor device

Details Quantum effect semiconductor device Quantum effect semiconductor device

1988-06-17

1991-01-29

James, Andrew J.

357 15, 357 16, H01L 2980

Patent

active

049890522

ABSTRACT:
A quantum effect semiconductor device a channel layer which is substantially a non-doped semiconductor and an n-type (or p-type) carrier supplying layer which is formed on a substrate and having a smaller electron affinity than the channel layer, and an n-type (or p-type) cap layer selectively formed on the carrier supplying layer so that an electron gas layer is formed only at a portion of the channel layer which is immediately under the cap layer.

REFERENCES:
patent: 4663643 (1987-05-01), Mimura
patent: 4833508 (1989-05-01), Ishikawa et al.
H. Sakaki, "Scattering Suppression and High-Mobility Effect of Size-Quantized Electrons in Ultrafine Semiconductor Wire Structures", Japanese Journal of Applied Physics, vol. 19, No. 12, Dec. 1980, pp. L735-738.
W. J. Skocpol et al., "One-Dimensional Localization and Interaction Effects in Narrow (0.1 .mu.m) Silicon Inversion Layers", Physical Review Letters, vol. 49, No. 13, 27 Sep. 1982.
P. M. Petroff et al., "Toward Quantum Well Wires: Fabrication and Optical Properties", Applied Physics Letters, 41(7), 1 Oct. 1982.
H. Okamoto, "Semiconductor Quantum-Well Structures for Optoelectronics; Recent Advances and Future Prospects", Japanese Journal of Applied Physics, vol. 26, No. 3, Mar. 1987, pp. 315-330.

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