Method of fabricating integrated semiconductor devices comprisin

Details Method of fabricating integrated semiconductor devices comprisin Method of fabricating integrated semiconductor devices comprisin

1997-07-30

1999-03-16

Powell, William

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

216 2, 216 33, 257414, 438 49, 438743, 438756, H01L 2100

Patent

active

058830090

ABSTRACT:
The chemoresistive gas sensor comprises a heating element integrated in a dedicated SOI substrate having an air gap in the intermediate oxide layer between two wafers of monocrystalline silicon. A sensitive element of tin oxide is formed over the heating element and separated from it by a dielectric insulating and protective layer. A trench formed at the end of the fabrication of the device, extends from the surface of the wafer in which the heating element is integrated, up to the air gap to mechanically separate and insulate the sensitive element from the rest of the chip, thereby improving the mechanical characteristics sensitivity and response of the sensor.

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