Integrated circuit die suitable for wafer-level testing and meth

Details Integrated circuit die suitable for wafer-level testing and meth Integrated circuit die suitable for wafer-level testing and meth

1997-11-26

1999-03-16

Powell, William

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

438740, H01L 2100

Patent

active

058830081

ABSTRACT:
A semiconductor integrated-circuit die includes a substrate of semiconductor material that has an edge. A conductive layer is disposed on the substrate, and a first insulator layer is disposed between the said substrate and the conductive layer. A functional circuit is disposed in the die. A conductive path is disposed beneath the insulator layer and is coupled to the circuit, the conductive path having an end portion that is located substantially at the edge of the substrate. The wafer on which the die is disposed has one or more signal lines that run along the scribe lines of the wafer. Before the die is scribed from the wafer, the conductive path couples the circuit on the die to one of these signal lines. The end portion of the conductive path is formed when the die is scribed from the wafer.

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