Monolithically integratable circuit for the generation of extrem

Details Monolithically integratable circuit for the generation of extrem Monolithically integratable circuit for the generation of extrem

1987-12-15

1989-06-27

Heyman, John S.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307270, 307246, 328 59, H03K 317, H03K 301

Patent

active

048432539

ABSTRACT:
A circuit, which may be monolithically integrated, for the generation of current pulses of extremely short duration, includes a differential input structure with first and second PNP transistors. The circuit also includes third, fourth and fifth NPN transistors. The emitter of the third transistor is connected to the negative terminal of a supply voltage source via a first resistor, and to the emitter of the fourth transistor via a first diode and to the emitter of the fifth transistor via a second resistor. The collector of the third transistor is connected to the collector of the second transistor and to the base of the fifth transistor, via a second diode, and to the base of the fourth transistor. The base terminal of the third transistor is connected to the emitter of the fifth transistor via a third resistor and to the negative terminal of the supply voltage source via a capacitor. The collector of the fifth transistor is connected to the positive terminal of the supply voltage source. The collector of the fourth transistor is used as an output terminal of the circuit.

REFERENCES:
patent: 3126490 (1964-03-01), Stern
patent: 3383524 (1968-05-01), Garrahan
patent: 4716313 (1987-12-01), Hori et al.
patent: 4739190 (1988-04-01), Alzati et al.

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