Composition and method for passivation of a metallization layer

Details Composition and method for passivation of a metallization layer Composition and method for passivation of a metallization layer

1997-01-23

1999-03-16

Powell, William

Cleaning and liquid contact with solids

Processes

Including application of electrical radiant or wave energy...

438750, 438754, H01L 21302, B08B 600

Patent

active

058824251

ABSTRACT:
A semiconductor wafer subject to a metallization etching process includes post-etching residue that is removed using a fluorine containing solution having a substantial amount of CO.sub.2 dissolved therein. Alternatively, or in addition, a fluorine containing solution, or the like, that has been used to remove the residue is rinsed from the wafer using a solvent containing a substantial amount of O.sub.3 dissolved therein. In each instance, pitting of the metallization layer is reduced.

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patent: 5676760 (1997-10-01), Aoki et al.
Scully et al., Localized Corrosion of Sputtered Aluminum and Al-0.5% Cu Alloy Thin Films in Aqueous HF Solution, II. Inhibition by CO.sub.2, J. Electrochem. Soc., vol. 137, No. 5, May 1990, 1373-1377.
Scully et al., Localized Corrosion of Sputtered Aluminum and Al-0.5% Cu Alloy Thin Films in Aqueous HF Solution, I. Corrosion Phenomena, J. Electrochem. Soc., vol. 137, No. 5, May 1990, 1365-1372.
"Aqueous Ozone Cleaning of Silicon"; abstract only; Tong et., al.; 1992; Proc.--Elect. Soc.; 92-12;ISSN:0161-6374.

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