Method of making fibrous silicon semiconductor by plasma CVD

Details Method of making fibrous silicon semiconductor by plasma CVD Method of making fibrous silicon semiconductor by plasma CVD

1987-05-18

1989-06-27

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437233, 437937, 437967, 136258, H01L 21205

Patent

active

048430226

ABSTRACT:
A PIN type semiconductor photoelectric conversion device is provided with a non-single-crystal semiconductor laminate member which comprises a first non-single-crystal semiconductor layer of a first conductivity, an I-type second non-single-crystal semiconductor layer and a third non-single-crystal semiconductor layer of a second conductivity type, and first and second electrodes which make ohmic contact with the first and third non-single-crystal semiconductor layers, respectively. Either one or both of the first and third non-single-crystal semiconductor layers have a fibrous structure which has a smaller light absorption coefficient than do the non-single-crystal semiconductors of the amorphous and microcrystalline structures formed of the same semiconductor material.
The non-single-crystal semiconductor layer of the fibrous structure is formed by a chemical vapor reaction of a gas mixture of semiconductor material gas, recombination center netralizer gas and impurity material gas in a reaction chamber in the same manner as has been employed in the manufacture of the conventional semiconductor photoelectric conversion devices. In this case, the substrate on which the non-single-crystal semiconductor layer is to be formed is disposed so that stream of the gas mixture may be passed over the substrate, and the chemical vapor reaction is carried out at a pressure of 0.001 to 10 Torr and at 100.degree. to 400.degree. C. in the reaction chamber.

REFERENCES:
patent: 4433202 (1984-02-01), Maruyama et al.
Richter et al., "Optical Properties and Transport in Microcrystalline Silicon Prepared at Temperatures Below 400.degree. C.", J. Appl. Phys. 52(12), Dec. 1981, pp. 7281-7286.

Affiliated with

Also associated with

Rating

Method of making fibrous silicon semiconductor by plasma CVD does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of making fibrous silicon semiconductor by plasma CVD, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of making fibrous silicon semiconductor by plasma CVD will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-813427