Method for forming FET with a super lattice channel

Details Method for forming FET with a super lattice channel Method for forming FET with a super lattice channel

1990-04-16

1991-01-29

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 40, 437110, 437907, 437 19, 148DIG90, 148DIG91, 148DIG160, H01L 21268, H01L 21335

Patent

active

049886347

ABSTRACT:
An improved FET is disclosed. The transistor is characterized in that its channel is constituted in the form of a super lattice. The super lattice structure provides a number of square well potential areas through which carriers can pass with little interaction with the gate insulating film.

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Lasky, "Effects of Various Encapsulating Films on Laser Recrystallization of Silicon on SiO.sub.2 ", J. Appl. Phys. 53 (12), 12/82, pp. 9038-9042.
Kimura, "Strong <100> Texture Formation of Poly Silicon Films on Amorphous Insulators by Laser Recrysallization", Appl. Phys. Lett. 45(8), 10/84, pp. 954-856.

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