Semiconductor laser device

Details Semiconductor laser device Semiconductor laser device

1986-12-19

1988-09-13

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

372 46, 372 48, 372 96, H01S 319

Patent

active

047714336

ABSTRACT:
A semiconductor laser device which includes a semiconductor substrate; a semiconductor active layer; a semiconductor waveguiding layer provided adjacent to the active layer having a larger energy band gap than that of the active layer; a first and a second semiconductor cladding layer provided such that the semiconductor waveguiding layer and the active layer are positioned between by the two cladding layers, which cladding layers have larger energy band gaps than that of the waveguiding layer; and a periodic refractive index distribution being provided in a direction parallel with the active layer inside a waveguide produced by the refractive index differences produced at the above-mentioned four layers.

REFERENCES:
patent: 4624000 (1986-12-01), Streifer et al.
Coleman et al., "Single-Longitudinal-Mode Metalorganic Chemical-Vapor-Deposition . . . ", Appl. Phys. Lett. 37(3), Aug. 1, 1980, pp. 262-263.

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