Semiconductor device and process

Details Semiconductor device and process Semiconductor device and process

1986-11-24

1988-09-13

James, Andrew J.

357 34, 357 50, H01L 2712

Patent

active

047713283

ABSTRACT:
A method of integrated circuit fabrication and the resulting integrated circuit wherein areas of recessed oxide isolation surround active device regions and the bird's head and bird's beak formed during formation of the recessed oxide regions is eliminated by forming a deep dielectric isolation trench directly over the bird's head. A very thin epitaxial layer can be provided over the active device regions of the integrated circuit. Preferably, the thin epitaxial layer is selectively grown only over active device regions. Also, in later manufacturing steps, metal is deposited in direct registration with contact areas.

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patent: 3972754 (1976-08-01), Riseman
patent: 4141765 (1979-02-01), Druminski et al.
patent: 4196440 (1980-04-01), Anantha et al.
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patent: 4445967 (1984-05-01), Kameyama
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patent: 4509249 (1985-04-01), Goto
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IBM Technical Disclosure Bulletin by Horng et al., vol. 23, #3, pp. 1034-1035, Aug. 1980.

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