High conductance ohmic junction for monolithic semiconductor dev

Details High conductance ohmic junction for monolithic semiconductor dev High conductance ohmic junction for monolithic semiconductor dev

1987-02-13

1988-09-13

Edlow, Martin H.

357 30, 357 68, H01L 2712

Patent

active

047713216

ABSTRACT:
In order to increase the efficiency of solar cells, a monolithic stacked device is constructed comprising a plurality of solar sub-cells adjusted for different bands of radiation. The interconnection between these sub-cells has been a significant technical problem. The invention provides an interconnection which is a thin layer of high ohmic conductance material formed between the sub-cells. Such a layer tends to form beads which serve as a shorting interconnect while passing a large fraction of the radiation to the lower sub-cells and permitting lattice-matching between the sub-cells to be preserved.

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