Method of making semi-amorphous semiconductor device

Details Method of making semi-amorphous semiconductor device Method of making semi-amorphous semiconductor device

1981-05-21

1983-08-16

Rutledge, L. Dewayne

Metal working

Method of mechanical manufacture

Assembling or joining

29572, 29576T, 29584, 148 15, 357 2, 427 86, 136258, H01L 21324, H01L 21326

Patent

active

043983430

ABSTRACT:
A semi-amorphous semiconductor device manufacturing method in which a non-single crystal semiconductor layer is provided on a substrate to form therebetween a PN, PIN, PI or NI junction and a current is applied to the non-single crystal semiconductor layer to provide a semi-amorphous semiconductor layer. When the current is applied to the non-single crystal semiconductor layer, it is irradiated by light and/or heated at the same time.

REFERENCES:
patent: 3795977 (1974-03-01), Berkenblit et al.
patent: 4151058 (1979-04-01), Kaplan et al.
patent: 4174521 (1979-11-01), Neale
patent: 4196438 (1980-04-01), Carlson
patent: 4199692 (1980-04-01), Neale
patent: 4226898 (1980-10-01), Ovshinsky et al.
Jang, J. et al, "Hydrogenation and Doping of Vacuum Evaporated a-Si", Journal of Non-Crystalline Solids, vol. 35 & 36, (1980), pp. 313-318.

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