Reactor for laser-assisted chemical vapor deposition

Coating apparatus – Gas or vapor deposition – With treating means

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Details

118715, 118726, 118730, 427 531, 427 541, C23C 1648

Patent

active

049878557

ABSTRACT:
A reactor for laser-assisted CVD has a cylindrical symmetry and includes a high-speed horizontal rotating disk susceptor. The reactor of the invention provides for radiation, preferably UV laser radiation, to be introduced into the reactor radially along an axis. The radiation is constrained to occupy a thin region of space at or immediately adjacent to substrate surfaces upon which deposition is to occur. Preferably the radiation is provided as an annular beam that is reflected uniformly by a conical reflector to provide a relatively thin and uniform sheet of UV radiation that is approximately 0.1 mm to approximately 1.0 mm thick. In addition the reactor provides for Hg vapor, or any other gaseous reactant, to be introduced into the reactor at a same point on the axis as the laser radiation, separately from other reactants, and from a source coaxially disposed and external to the reactor.

REFERENCES:
patent: 4260649 (1981-04-01), Denison et al.
patent: 4558660 (1985-12-01), Nishizawa et al.
patent: 4657777 (1987-04-01), Hirooka et al.
patent: 4664057 (1987-05-01), Hemmati
patent: 4702936 (1987-10-01), Maeda et al.
patent: 4732793 (1988-03-01), Itoh

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