High-power amplifier using parallel transistors

Details High-power amplifier using parallel transistors High-power amplifier using parallel transistors

1996-02-14

1997-12-02

Mottola, Steven

Amplifiers

With semiconductor amplifying device

Including plural amplifier channels

330302, 330306, H03F 368, H03F 3191

Patent

active

056940858

ABSTRACT:
An input radio frequency signal to be amplified is fed to the gate terminals of parallel field effect power transistors through impedance matching networks that comprise parallel resistor-capacitor combinations. The capacitor is selected so that it is self-resonant at the frequency of operation, thereby preventing attenuation of the input signal at that frequency. A shunt resistor is coupled between the gates of the parallel transistors to eliminate odd mode oscillations.

REFERENCES:
patent: 3471796 (1969-10-01), Wright
patent: 5420537 (1995-05-01), Weedon et al.

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