Method of manufacturing a semiconductor device contact structure

Details Method of manufacturing a semiconductor device contact structure Method of manufacturing a semiconductor device contact structure

1992-02-14

1993-05-18

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437238, 437241, 437944, 148DIG100, H01L 2131

Patent

active

052121178

ABSTRACT:
A method of manufacturing a semiconductor device comprising the steps of forming a first insulating layer on a semiconductor substrate, forming a resist film sensitive to electron beams on the first insulating layer, applying electron beams onto a predetermined region of the resist film, removing unnecessary portions of the resist film by using a developer, thereby forming a remaining pattern resist film, forming a second insulating layer on the entire region of the first insulating layer and the remaining pattern resist film, simultaneously removing the remaining pattern resist film and the second insulating layer which is formed thereon, thereby forming an opening of a predetermined pattern on the second insulating layer, and etching the first insulating layer through the opening, using the second insulation layer as a mask, thereby causing a predetermined region of the semiconductor substrate to be exposed.

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A. Bhattacharyya et al, "Lift-Off Insulator Process", IBM Technical Disclosure Bulletin, vol. 21, No. 9, Feb. 1979. pp. 3577-3578.

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