Method for forming planarized films by preferential etching of t

Details Method for forming planarized films by preferential etching of t Method for forming planarized films by preferential etching of t

1992-02-28

1993-05-18

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

156654, 437235, 437245, H01L 2148

Patent

active

052121160

ABSTRACT:
A method of forming a planarized or smoothed dielectric or other material layer upon a partially fabricated integrated circuit is disclosed. Conventional planarization techniques involve deposition of a dielectric or other material layer followed by anisotropic etchback. Unfortunately, some commercial equipment tends to etch the center of the wafer faster than the edges. The disclosed process forms a layer which is thicker in the central region than the edge region. Thus, when the disclosed process is followed by a conventional etchback, a planar dielectric or other material layer over the entire wafer is formed. Other aspects of the invention include processes and apparatus for producing smooth deposition and etching by control of the impedance of the etching and/or chemical precursor gases.

REFERENCES:
patent: 4466872 (1984-08-01), Einbinder
patent: 4539744 (1985-09-01), Burton
patent: 4705596 (1987-11-01), Gimpelson et al.
patent: 4721689 (1988-01-01), Chaloux, Jr. et al.
patent: 4774416 (1988-09-01), Askary et al.
patent: 4872947 (1989-10-01), Wang et al.

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