Tunnel transistor

Details Tunnel transistor Tunnel transistor

1996-03-29

1997-12-02

Tupper, Robert S.

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

257 29, 257 14, 257 27, H01L 2906, H01L 310328, H01L 310336, H01L 31072, H01L 31109

Patent

active

056939558

ABSTRACT:
A tunnel transistor including source and drain and a silicon oxide tunneling layer overlying the source. A polysilicon quantum well layer positioned on the tunneling layer and in contact with the drain. The quantum well layer having a thickness which places the ground state above the Fermi level. A silicon oxide insulating layer positioned on the quantum well layer and a gate electrode positioned on the insulating layer overlying the quantum well layer and the source terminal. The tunneling layer being thin enough to allow tunneling between the source and the quantum well layer, and the insulating layer being thick enough to prevent tunneling therethrough.

REFERENCES:
patent: 4721983 (1988-01-01), Frazier
patent: 5270225 (1993-12-01), Goronkin et al.
patent: 5428224 (1995-06-01), Hayashi et al.
patent: 5489785 (1996-02-01), Tehrani et al.

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