Optical semiconductor device and process of prodcuing same

Details Optical semiconductor device and process of prodcuing same Optical semiconductor device and process of prodcuing same

Filed on

1992-08-31

Date issued

1994-07-05

Examiner

Epps, Georgia Y.

Patent Class

Coherent light generators

SubClass

Particular resonant cavity

SubSubClass

Distributed feedback

Other Related Categories

372 45, 372 46, 372 48, H01S 308, H01S 319

Type

Patent

Status

active

Patent number

053274504

Description

ABSTRACT:
An optical semiconductor device and a process of producing same ensuring a good device performance when a diffraction grating is formed by dry etching and component crystal layers are formed by an MOCVD process. The production process comprises the steps of: (1) processing a surface of a semiconductor wafer to form thereon a diffraction grating in the form of a periodic corrugation for selectively transmitting a light having a specific wavelength; (2) forming on the diffraction grating a guide layer, an active layer and a clad layer in that order; (3) forming on the clad layer a double heterostructure composed of lower and upper layers, the upper layer having a bandgap greater than that of the active layer; (4) measuring the photoluminescence intensity of the lower layer of the double heterostructure; and (5) determining whether or not subsequent process steps necessary for completing the optical semiconductor device should be executed, by using the measured value of the photoluminescence intensity as a discriminative value.

REFERENCES:
patent: 4665528 (1987-05-01), Chinone et al.
patent: 4740987 (1988-04-01), McCall, Jr. et al.
T. Fujii et al., "MOVPE growth of wire-shaped InGaAs corrugated InP," Inst. Phys. Conf. Ser. No. 120: Chapter 11, Int. Symp. GaAs and Related Compounds, Seattle, Wash., pp. 541-546, 1991. (no month for publication).

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