Method of forming silicon carbide trench mosfet with a schottky

Details Method of forming silicon carbide trench mosfet with a schottky Method of forming silicon carbide trench mosfet with a schottky

1996-12-18

1997-12-02

Jackson, Jerome

Fishing, trapping, and vermin destroying

437100, 437225, 437228, 257476, 257472, H01L 2144, H01L 2120

Patent

active

056935692

ABSTRACT:
A silicon carbide trench MOSFET is provided that includes a first conductivity type semiconductor substrate made of silicon carbide. A first conductivity type drift layer and a second conductivity type base layer, both made of silicon carbide, are sequentially formed by epitaxial growth on the semiconductor substrate. The first conductivity type drift layer has a lower impurity concentration than the semiconductor substrate. A first conductivity type source region is formed in a part of a surface layer of the second conductivity type base layer. A gate electrode is received through an insulating film, in a first trench extending from a surface of the first conductivity type source region to reach the first conductivity type drift layer. A Schottky electrode disposed on an inner surface of a second trench having a greater depth than the first trench.

REFERENCES:
patent: 4823172 (1989-04-01), Mihara
patent: 5177572 (1993-01-01), Murakami
patent: 5323040 (1994-06-01), Baliga
patent: 5506421 (1996-04-01), Palmour

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