Semiconductor laser device

Details Semiconductor laser device Semiconductor laser device

1989-03-21

1990-03-20

Sikes, William L.

Coherent light generators

Particular active media

Semiconductor

357 17, H01S 319

Patent

active

049107453

ABSTRACT:
A semiconductor laser device of the buried heterostructure type in which leakage current is substantially reduced. A mesa portion carries the active lasing portion of the laser, and current blocking layers are grown at either side of the mesa portion. One of the current blocking layers has its conductivity type inverted to the opposite type to eliminate a current leakage path, thereby to provide a high efficiency low leakage current semiconductor laser. Conductivity inversion is accomplished by adjusting the impurity concentration levels in the layers on either side of the mesa portion, and controllably diffusing impurities from one layer to another until conductivity inversion is accomplished in a thin tip portion of one of the layers.

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patent: 4730329 (1988-03-01), Yoshida et al.
patent: 4786951 (1988-11-01), Tokuda et al.
patent: 4788689 (1988-11-01), Tokuda et al.
"IEEE Journal of Quantum Electronics", vol. QE-21, No. 6 (1985), pp. 619-622.
"High Power Output InGaAsP/InP Buried Heterostructure Lasers", Nakano et al., Electronics Letters, 15th Oct. 1981, vol. 17, No. 21, pp. 782-783.
"Distributed Feedback Laser Emitting at 1.3 .mu.m for High-Bit-Rate Systems", Ishikawa et al., Fujitsu Sci. Tech. J., 22, 5, pp. 451-460 (Dec. 1986).
"Effect of Active Layer Placement on the Threshold Current of 1,3-.mu.m InGaAsP Etched Mesa Buried Heterostructure Lasers", Dutta et al., Appl. Phys. Lett. 45(4), 15 Aug. 1984, pp. 337-339.

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