Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Field effect transistor
Patent
1992-07-01
1994-07-05
Prenty, Mark V.
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Field effect transistor
257 12, 257 14, 257615, 257613, H01L 2980, H01L 29161
Patent
active
053269950
ABSTRACT:
A heterojunction semiconductor device comprises a semi-insulating substrate, a channel layer comprising first and second sub-layers provided on the substrate for sustaining a two-dimensional carrier gas therein, a carrier supplying layer of a doped semiconductor material provided on the channel layer, a source electrode a drain electrode and a gate electrode provided on the carrier supplying layer. The first and second sub-layers have respective first and second saturation drift velocities of carriers such that the first saturation drift velocity is substantially larger than said second saturation drift velocity.
REFERENCES:
patent: 4745452 (1988-05-01), Sollner
patent: 5164800 (1992-11-01), Nakajima
Nakata et al., "Extremely High 2DEG Concentration in Selectively Doped in.sub.0.53 Ga.sub.0.47 As/N-In.sub.0.52 Al.sub.0.48 As Heterostructures Grown by MBE," Japanese Journal of Applied Physics, Part 2: Letters, vol. 26, No. 1, Jan. 1987, Tokyo, Japan, pp. 59-61.
Patent Abstracts of Japan, vol. 13, No. 468 (E-834) Oct. 23, 1989 & JP-A-1 183859 (Sumitomo Electric Industries) Jul. 21, 1989.
Aina et al., "AllnAs/InP MODFET Structures Grown by OMVPE," Second International Conference: Indium Phosphide and Related Materials, Apr. 23-25, 1990, Denver, Colo., IEEE Catalog #90CH2859-7, pp. 274-281.
Ng et al., "Submicron Double Heterojunction Strained InAlAs/InGaAs HEMT's: An Experimental Study of DC and Microwave Properties," Second International Conference: Indium Phosphide and Related Materials, Apr. 23-25, 1990, Denver, Colo. IEEE Catalog #90CH2859-7, pp. 424-427.
Tsuchiya et al., "Electron Mobility in GaAs-AlAs Double Quantum Wells Having Resonant Coupling," Inst. Phys. Conf. Ser. No. 112: Chapter 6, paper presented at Int. Symp. GaAs and Related Compounds, Jersey, Channel Islands, Sep. 24-27, 1990, pp. 339-344.
Fujitsu Limited
Prenty Mark V.
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