Semiconductor device having silicon carbide grown layer on insul

Details Semiconductor device having silicon carbide grown layer on insul Semiconductor device having silicon carbide grown layer on insul

1991-12-10

1994-07-05

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

Specified wide band gap semiconductor material other than...

Diamond or silicon carbide

257 67, 257350, 257613, 257627, H01L 310312, H01L 2904, H01L 2701, H01L 2912

Patent

active

053269918

ABSTRACT:
A semiconductor device is manufactured by forming an epitaxial layer (22) insulated from a silicon substrate (2), and forming a device in the epitaxial layer (22). On the semiconductor substrate (2), a silicon dioxide layer (4) is formed (FIG. 2A). Then the silicon dioxide layer (4) is provided with openings (14) (FIG. 2D). Silicon carbide is grown until it protrudes from the openings (14) to thereby form a silicon carbide seed crystal layer (16) (FIG. 2E). Next, oxidation is carried out, allowing a field oxide layer (20) to be connected at the portion under the openings (14) and the silicon carbide seed crystal layer (16) to be insulated from the silicon substrate (2). Thereafter, epitaxial growth is effected from the silicon carbide seed crystal layer (16). The growth is stopped before silicon carbide grown layers (22) connect to one another, thus obtaining epitaxially grown layers (22) having regions which are separate from one another. The MOS device is formed in this epitaxially grown layer (22). The silicon carbide grown layer (22) is isolated from the silicon substrate (2) and formed as regions isolated from one another, having a uniform plane bearing. Accordingly, the layer (22) causes no electrostatic capacitance due to the absence of a pn junction with the silicon substrate (2) or with an adjacent layer (22), allowing high-speed operation of the device. Moreover, the unique plane bearing facilitates control during the manufacturing process.

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"Fabrication and properties of polycrystalline-SiC/Si structures for Si Heterojunction Devices" Applied Physics Letters, vol. 59, No. 1, Jul. 1991, pp. 51-53.
"Lateral Epitaaxial Overgrowth of Silicon on SiO.sub.2 ", by D. D. Rathman et al., Journal of Electro-Chemical Society Solid-State Science and Technology, Oct., 1982, p. 2303.
"New SOI-Selective Nucleation Epitaxy", by Ryudai Yonehara et al., Preliminary Bulletin for the 48th Fall Academic Lecture 1987 by the Applied Physics Society, 19p-Q-15, p. 583.

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