Semiconductor device having an improved moisture resistance

Details Semiconductor device having an improved moisture resistance Semiconductor device having an improved moisture resistance

1981-12-22

1984-09-18

Larkins, William D.

357 53, 357 54, 357 68, 357 71, 357 72, H01L 2330, H01L 2328, H01L 2348, H01L 2934

Patent

active

044727305

ABSTRACT:
In a plastic or resin encapsulated semiconductor device, the bonding pad electrodes cannot be covered by a waterproof film. Moisture easily penetrates the plastic or resin coating and/or the boundary between the coating and the bonding wire reaching the phosphorus silicate glass under the bonding pad electrode. This penetrated moisture produces phosphoric acid which in turn corrodes the bonding pad electrodes. The present invention prevents the corrosion of the bonding pad electrodes by eliminating the phosphorus silicate glass under the bonding pad electrode or by separating the bonding pad electrode from the phosphorus silicate glass.

REFERENCES:
patent: 4005455 (1977-01-01), Watrous, Jr. et al.
patent: 4204894 (1980-05-01), Komeda et al.
patent: 4273805 (1981-06-01), Dawson
H. R. Gates et al., "Forming Openings in an Insulating Layer", IBM Technical Disclosure Bulletin, vol. 10, (1967), p. 323.

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